Microgravity and ultrahigh vacuum as specific components of technological environment and new feasibilities of semiconductor technology

Heading: 
Space Materials and Technologies
1Baranskii, PI, 1Babich, VM, 2Svechnikov, SV, 3Gaidar, GP, 4Ptushynskyi, Yu.G
1V.Ye. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
2V.Ye. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
3Institute for Nuclear Research of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
4Institute of Physics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
Kosm. nauka tehnol. 2002, 8 ;(4):096-099
https://doi.org/10.15407/knit2002.04.096
Publication Language: Ukrainian
Abstract: 
We discuss the role of the microgravity (residual microaccelerations) and ultrahigh vacuum in semiconductor crystal growth by means of the nonampule crusible-free zonal melting on the board of the spacecraft under orbital flight conditions. Both of the factors mentioned above are of great importance for the space semiconductor technology.
Keywords: microgravity, semiconductor crystal, ultrahigh vacuum
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