Deriving ultrapure three-dimensional semiconductor materials under space vacuum conditions
|1Paton, BE, 1Asnis, EA, 1Zabolotin, SP, 2Baranskii, PI, 2Babich, VM |
1E.O. Paton Electric Welding Institute of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
2V.Ye. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
|Kosm. nauka tehnol. 2003, 9 ;(5-6):030-032|
|Publication Language: Russian|
We give some results of technological experiments aimed at producing ultrapure three-dimensional semiconductor materials under space vacuum conditions by the method of electron beam zone melting with the use of molecular shield and integrated melting process, which is a combination of zone melting with the electric transfer process.
|Keywords: electron beam zone melting, semiconductor materials, space vacuum conditions|
1. Berzhaty V. I., Zvorykin L. L., Ivanov A. I., Pchelyakov O. P., Sokolov L. V. Prospects for the implementation of vacuum technology under orbital flight. Avtomaticheskaya Svarka, No. 10 (559), 108—116 (1999) [in Russian].
2. Paton B. E., Lapchinsky V. F. Welding and related technologies in space, 180 p. (Nauk. Dumka, Kiev, 1998) [in Russian].